Developments in voltage-controlled subnanosecond magnetization switching

We review the current status of research on magnetization switching that utilizes the voltage-controlled magnetic anisotropy (VCMA) effect. In particular, we focus on the magnetization switching driven by subnanosecond voltage pulses as a promising alternative to the existing spin-transfer-torque technology utilized in magnetic random-access memories. Although it has superior energy efficiency, the VCMA-driven magnetization switching faces practical issues including the write-error rate, narrow operating window, and necessity for external bias magnetic field. We address these issues from both experimental and theoretical point of views by introducing recent developments in the field of VCMA studies. We also discuss possible material designs for further enhancing both the energy efficiency and reliability of VCMA-driven magnetization switching.