欧姆接触
半导体
肖特基二极管
材料科学
肖特基势垒
接触电阻
金属
光电子学
接口(物质)
金属半导体结
钛
纳米技术
图层(电子)
冶金
复合材料
接触角
二极管
坐滴法
作者
Yanwen Chen,Yuanchang Li,Jian Wu,Wenhui Duan
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2017-01-01
卷期号:9 (5): 2068-2073
被引量:27
摘要
The contact interface plays a crucial role in the performance of various nanoelectronic devices based on two-dimensional (2D) semiconductors. Using first-principles calculations, we investigate the nature of single-layer titanium trisulfide (TiS3) and metal contacts as a prototype system. We find that the contacts with Au(111), Ag(111), Al(111) and Cu(111) are of the Schottky type with barriers of 2.15, 1.67, 1.55 and 0.84 eV while that with Sc(111) is of a low-resistance Ohmic type. By comparing with several other typical 2D semiconductor–metal contacts, we propose that the contact type (i.e., Schottky or Ohmic) can be preliminarily identified according to the separation between the metal and the 2D semiconductor, which can be conveniently measured in experiments, with a critical value of ∼2.3 ± 0.2 Å.
科研通智能强力驱动
Strongly Powered by AbleSci AI