超级电容器
拉曼光谱
X射线光电子能谱
材料科学
硅
化学工程
氮气
碘值
聚磷酸盐
惰性气体
碳纤维
无机化学
电容
化学
磷酸盐
有机化学
电极
复合材料
复合数
冶金
物理化学
工程类
物理
光学
作者
Sunil Kumar Ramasahayam,Zachary Hicks,Tito Viswanathan
标识
DOI:10.1021/acssuschemeng.5b00453
摘要
This paper reports the synthesis of N, P, and Si tri-doped C (NPSiDC) using thiamine (a renewable resource material), silicone fluid, and ammonium polyphosphate. A one-pot microwave assisted method was utilized in synthesizing NPSiDC. The method is simple, rapid, and economical which does not employ any inert or reducing gases. Three variants of NPSiDCs were synthesized by varying the proportions of the precursor materials. NPSiDC-1 was found to have high specific surface area of 471 m2 g–1 and a single point total pore volume of 0.25 cm3 g–1. Raman spectroscopy results revealed the presence of defects in an sp2 C lattice. XPS analysis revealed the presence of N, P, Si, and O in C. NPSiDC-1 and NPSiDC-2 exhibited tremendous potential for supercapacitor applications with NPSiDC-1 recording highest specific capacitance value of 318 F g–1 in 6 M KOH. NPSiDCs were discovered to be electrochemically stable after 2000 cycles in 6 M KOH.
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