Temperature dependence of the sticking coefficients of bis-diethyl aminosilane and trimethylaluminum in atomic layer deposition

In this paper, the authors present the temperature dependent sticking coefficient (SC) of bis-diethyl aminosilane (BDEAS) and trimethylaluminum (TMA) in atomic layer deposition. SiO2 from BDEAS and ozone at substrate temperatures between 200 and 350 °C as well as Al2O3 from TMA and water deposited at substrate temperatures between 150 and 300 °C was deposited on our likewise in this journal published cavity test structures. The SC of BDEAS shows an Arrhenius dependence while for TMA no temperature dependent SC could be resolved. The activation energy for BDEAS which is extracted from a linear fit to the Arrhenius diagram is compared to the value gained by density functional theory calculations from the literature. Furthermore, the different growth behavior of BDEAS and TMA under substrate temperature considerations is identified with different deposition regimes as proposed in the literature.