降级(电信)
堆积
PID控制器
断层(地质)
热的
过程(计算)
叠加断层
产量(工程)
控制理论(社会学)
材料科学
计算机科学
化学
工程类
电子工程
物理
地质学
控制工程
复合材料
热力学
操作系统
人工智能
温度控制
控制(管理)
有机化学
地震学
作者
Dominik Lausch,Volker Naumann,Andreas Graff,Angelika Hähnel,O. Breitenstein,Christian Hagendorf,J. Bagdahn
标识
DOI:10.1016/j.egypro.2014.08.013
摘要
Potential-induced degradation (PID) is currently one of the most important and prominent module degradation mechanisms leading to significant yield losses. It was shown that Na decorated stacking faults are responsible for this degradation mechanism of the solar modules. Additionally, PID can be recovered by an applied reversed voltage to the one causing PID. In this contribution both a thermal and an electrical recovery were performed. By in-situ thermal recovery and subsequent microscopic investigations the recovery process will be clarified. It is shown that Na causing PID diffuses out of the stacking fault during the thermal recovery process resulting in vanishing of the PID-s shunts. The stacking fault originally causing PID-s can still be verified by its atomic structure after recovery, now without any Na decoration. The clean stacking fault is not electrically active and thus is not influencing the electronic properties of the solar cells anymore. Finally, a qualitative process explaining the recovery is proposed.
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