材料科学
石墨烯
异质结
光电子学
纳米棒
肖特基势垒
肖特基二极管
响应度
半导体
带隙
纳米技术
应变工程
调制(音乐)
二极管
光电探测器
硅
哲学
美学
作者
Shuo Liu,Qingliang Liao,Shengnan Lu,Zheng Zhang,Guangjie Zhang,Yue Zhang
标识
DOI:10.1002/adfm.201503905
摘要
Strain modulation in flexible semiconductor heterojunctions has always been considered as an effective way to modulate the performance of nanodevices. In this work, a graphene/ZnO nanorods film Schottky junction has been constructed. It shows considerable responsivity and fast on‐off switch to the UV illumination. Through utilizing the piezopotential induced by the atoms displacement in ZnO under the compressive strain, 17% enhanced photosensing property is achieved in this hybrid structure when applying −0.349% strain. This performance improvement can be ascribed to the Schottky barrier height modification by the strain‐induced piezopotential, which results in the facilitation of electron–hole separation in the graphene/ZnO interface. An energy band principle as well as a finite element analysis is proposed to understand this phenomenon. The results here provide a facile approach to boost the optoelectronic performance of graphene/ZnO heterostructure, which may also be applied to other Schottky junction based hybrid devices.
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