Vivek V. Nagarkar,T. K. Gupta,Stuart Miller,Y. Klugerman,M.R. Squillante,G. Entine
出处
期刊:IEEE Transactions on Nuclear Science [Institute of Electrical and Electronics Engineers] 日期:1998-06-01卷期号:45 (3): 492-496被引量:285
标识
DOI:10.1109/23.682433
摘要
We are developing large-area, thick, structured CsI(Tl) imaging sensors fora wide variety of X-ray imaging applications. Recently we have fabricated structured CsI(Tl) scintillators ranging from 30 /spl mu/m (16 mg/cm/sup 2/) to 2000 /spl mu/m (900 mg/cm/sup 2/) in thickness and up to 15/spl times/15 cm/sup 2/ in area. Even 2000-/spl mu/m-thick film showed well-controlled columnar growth throughout the film. Material characterization confirmed that the film is crystalline in nature and that the stoichiometry is preserved. To improve the spatial resolution of thick films, post-deposition treatments were performed. The effect of these treatments on film characteristics was quantitatively evaluated by measuring signal output, modulation transfer function, noise power spectrum, and detective quantum efficiency. The data show that by proper film treatments, the film detective quantum efficiency can be improved.