材料科学
椭圆偏振法
折射率
溅射
溅射沉积
薄膜
激光器
光学
钼
摩尔吸收率
字体
光电子学
分析化学(期刊)
氮化物
物理
图层(电子)
纳米技术
化学
色谱法
冶金
计算机科学
操作系统
作者
Victor V. Atuchin∥⊥,T. Kh. Khasanov,V. A. Kochubey,L.D. Pokrovsky,Т. А. Гаврилова
标识
DOI:10.1142/s0217979209053813
摘要
Molybdenum nitride films γ- Mo 2 N/Si have been fabricated with reactive magnetron sputtering in ( N 2 + Ar ) gas mixture. Phase composition of the films has been defined with reflection high energy electron diffraction. Refractive index and extinction coefficient of γ- Mo 2 N have been evaluated with laser ellipsometry at λ = 632.8 and 488.0 nm. Upper limit of γ- Mo 2 N film thickness measurable with laser ellipsometry has been found to be ~80 nm.
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