Optimization of optical behavior of InGaN-GaN MQW green LEDs with a novel high-low profile of Indium composition in the active layer

In this paper, it was proposed and demonstrated with rigorous simulations a method to increase the luminous intensity and radiative efficiency of an InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) by incorporating a novel high-low Indium composition in In x Ga 1−x N in the active layer. The effect of varying Indium composition, p-type and n-type doping of GaN and active layer thickness on the radiative rate and luminous intensity of the LED were studied by using ATLAS software (Silvaco International). By using this novel idea, it was shown that the device performance of GaN based green LEDs incorporating a high-low In composition in the active layer have significantly improved over that of the conventional green LEDs that use a single Indium composition in all the layers.