实现(概率)
过渡金属
图层(电子)
材料科学
纳米技术
化学
数学
生物化学
统计
催化作用
作者
Yaxin Zhao,Heng Jin,Zi-Yi Han,Xinlei Zhao,Ya-Ning Ren,Ruohan Zhang,Xiaofeng Zhou,Wenhui Duan,Bing Huang,Yu Zhang,Lin He
标识
DOI:10.1038/s41467-025-59007-7
摘要
Layered van der Waals transition metal dichalcogenides (TMDCs), generally composed of three atomic X-M-X planes in each layer (M = transition metal, X = chalcogen), provide versatile platforms for exploring diverse quantum phenomena. In each MX2 layer, the M-X bonds are predominantly covalent in nature and, as a result, the cleavage of TMDC crystals normally occurs between the layers. Here we report the controllable realization of fractional-layer WTe2 via an in-situ scanning tunneling microscopy (STM) tip manipulation technique. By applying STM tip pulses, hundreds of the topmost Te atoms are removed to form a nanoscale monolayer Te pit in the 1 T'-WTe2, thus realizing a 2/3-layer WTe2 film. Such a configuration undergoes a spontaneous atomic reconstruction, yielding a unidirectional charge density redistribution with the wavevector and geometry quite distinct from that of pristine 1 T'-WTe2. Our results expand the conventional understanding of the TMDCs and are expected to stimulate further research on the structure and properties of fractional-layer TMDCs.
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