Highly Oriented WS2 Monolayers for High‐Performance Electronics

Abstract 2D transition‐metal dichalcogenide (TMDC) semiconductors represent the most promising channel materials for post‐silicon microelectronics due to their unique structure and electronic properties. However, it remains challenging to synthesize wide‐bandgap TMDCs monolayers featuring large areas and high performance simultaneously. Herein, highly oriented WS 2 monolayers are reproducibly synthesized through a templated growth strategy on vicinal C/A‐plane sapphire wafers. Various spectroscopic characterizations confirm the high crystallographic orientation and uniformity across the entire wafers. Electronic measurements for samples transferred onto SiO 2 /Si substrates reveal high average field‐effect mobilities of 62 and 180 cm 2 V −1 s −1 at room temperature and 8 K, respectively. On hexagonal boron nitride substrates, these mobilities increase to 94 and 473 cm 2 V −1 s −1 , respectively. A record high saturation current density of 675 µA µm −1 is observed, outperforming the index required for high‐density integration circuits in IRDS 2025. This work paves the way for the application of wide‐bandgap TMDC monolayers in post‐silicon electronics.