记忆电阻器
材料科学
宽禁带半导体
带隙
半导体
光电子学
蒸发
纳米技术
阴极射线
电子
电子工程
物理
工程类
量子力学
热力学
作者
Haiming Qin,Sun Shilei,Nan He,Pengchao Zhang,Shuai Chen,Cong Han,Rui Hu,Zhenhua Wu,Weijing Shao,Mohamed Saadi,Hao Zhang,Youde Hu,Xinpeng Wang,Yi Liu,Liang Zeng,Yi Tong
摘要
The combination of high-performance materials and simplified multilayer fabrication processes can promote the rapid and high-quality development of memristors. In this work, we proposed wide-bandgap semiconductor silicon carbide (SiC)-based memristors fabricated entirely by electron beam evaporation technology. The Cu/SiC/Pt structure was fabricated on a 2-inch intrinsic silicon substrate, which can achieve a transition from volatility to non-volatility. Devices had a low and symmetric switching voltage of ±0.5 V, an endurance of >200 cycles, a retention of >103 s, an ON/OFF ratio of ∼103, and can achieve at least 6 different stable resistance states. The combined effects of traps and Cu conductive filaments caused the current to change abruptly during switching, while also possessing excellent synaptic plasticity and pulse programming ability. Our work demonstrated that wide-bandgap semiconductor SiC is a promising candidate for advanced memristors.
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