各向异性
材料科学
凝聚态物理
范德瓦尔斯力
各向同性
电介质
JFET公司
场效应晶体管
光电子学
晶体管
光学
物理
电压
分子
量子力学
作者
Zong‐Dong Sun,Jie Liu,Yongshan Xu,Xiong Xiong,Yuan Li,Meihui Wang,Kailang Liu,Huiqiao Li,Yanqing Wu,Tianyou Zhai
标识
DOI:10.1002/adma.202410469
摘要
Abstract Low‐symmetry structures in van der Waals materials have facilitated the advancement of anisotropic electronic and optoelectronic devices. However, the intrinsic low symmetry structure exhibits a small adjustable anisotropy ratio (1–10), which hinders its further assembly and processing into high‐performance devices. Here, a novel 2D anisotropic dielectric, GaInS 3 (GIS), which induces isotropic MoS 2 to exhibit significant anisotropic optical and electrical responses is demonstrated. With the excellent gate modulation ability of 2D GIS (dielectric constant k ∼12), MoS 2 field effect transistor (FET) shows an adjustable conductance ratio from isotropic to anisotropic under dual‐gate modulation, up to 10 6 . Theoretical calculations indicate that anisotropy originates from lattice mismatch‐induced charge density deformation at the interface. Moreover, the MoS 2 /GIS photodetector demonstrates high responsivity (≈4750 A W −1 ) and a large dichroic ratio (≈167). The anisotropic van der Waals dielectric GIS paves the way for the development of 2D transition metal dichalcogenides (TMDCs) in the fields of anisotropic photonics, electronics, and optoelectronics.
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