光电子学
逻辑门
非逻辑
NMOS逻辑
晶体管
场效应晶体管
材料科学
通流晶体管逻辑
计算机科学
物理
电子工程
工程类
量子力学
电压
作者
Zinan Ma,Peize Yuan,Li Lin,Xiaojie Tang,Xueping Li,Suicai Zhang,Leiming Yu,Yurong Jiang,Xiaohui Song,Congxin Xia
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-10-28
卷期号:24 (44): 14058-14065
被引量:4
标识
DOI:10.1021/acs.nanolett.4c04034
摘要
Optoelectronic reconfigurable logic gates are promising candidates to meet the multifunctional and energy-efficient requirements of integrated circuits. However, complex device architectures need more power and hinder multifunctional device applications. Here, we design vertical field-effect transistors (VFET) based on the two-dimensional (2D) graphene/MoS
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