Charge Neutral Point Shift of a 700 nm-Thick α-Ga2O3 Thin-Film Detector under Soft X-ray Irradiation

This study investigates the shift of the charge neutral point (CNP) of 700 nm-thick α-Ga2O3 metal–semiconductor-metal (MSM) devices in response to X-ray exposure and relaxation time. The CNP shift is mainly attributed to the generation and recombination of positive ions in the α-Ga2O3 thin film. These findings contribute to the understanding of α-Ga2O3 MSM X-ray detectors and have the potential to be applied in various fields of X-ray imaging and sensing technologies.