极紫外光刻
浸没式光刻
平版印刷术
激光线宽
多重图案
下一代光刻
材料科学
过程(计算)
光刻
计算机科学
覆盖
光电子学
计算光刻
纳米技术
电子工程
抵抗
光学
工程类
电子束光刻
物理
操作系统
程序设计语言
激光器
图层(电子)
作者
Qiang Wu,Yanli Li,Xianhe Liu,Sheng Wang
标识
DOI:10.1109/cstic58779.2023.10219265
摘要
It is generally accepted that the Extreme Ultra-Violet (EUV) lithography has been used in large scale starting at the 5 nm logic technology node. Here we perform an analysis on the possibility of manufacturing the 5 nm design with 193 nm immersion lithography with multiple patterning techniques as it has aroused quite some interest in the industry. We will analyze process challenges from linewidth uniformities and overlay, as well as the challenges in etch process.
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