蚀刻(微加工)
退火(玻璃)
多孔性
各向同性腐蚀
光电效应
材料科学
微观结构
制作
反应离子刻蚀
化学工程
纳米技术
干法蚀刻
光电子学
复合材料
医学
替代医学
图层(电子)
病理
工程类
作者
Yunkai Li,Siqi Zhao,Shangyu Yang,Ning Guo,Weilong Yuan,Yicheng Pei,Guangxuan Yan,Xingfang Liu
标识
DOI:10.1088/1361-6641/acf72e
摘要
Abstract Low-temperature post oxidation annealing of 4H-SiC at 900 °C for 90 min after photoelectric chemical (PEC) etching in alkaline solution can eliminate the porous structures that form during the etching process, reduce the porosity, and optimize the surface morphology, which has minimal effect on unetched surfaces, allowing for selective treatment between etched and unetched surfaces. Additionally, it can improve the etching depth and enable effective repetition of the etching process. These benefits make PEC etching a valuable technique for microstructure fabrication and surface treatment.
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