光电流
基质(水族馆)
材料科学
光电子学
带隙
半导体
表面光电压
纳米技术
物理
海洋学
量子力学
光谱学
地质学
作者
S.I. Khan,Sahar Daemi,Maria Kanwal,Chengcan Xiao,Frank E. Osterloh
出处
期刊:Journal of materials chemistry. A, Materials for energy and sustainability
[The Royal Society of Chemistry]
日期:2023-01-01
卷期号:11 (43): 23418-23429
被引量:3
摘要
Bi 2 S 3 is a narrow bandgap semiconductor of interest for the construction of solar energy devices and can be synthesized by E-Chem/Sulfurization approach. The (photo)current from Bi 2 S 3 can be controlled by the substrate workfunction and its resistance.
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