Photovoltaic cell parameter analysis of CsPb1-xZnxIBr2-based all-inorganic perovskite solar cells for low-temperature processed flexible devices

All-inorganic CsPbIBr2 absorber-based perovskite solar cells (PSCSs) offer decent stability under a moist atmosphere. However, the processing temperature is ~ 200 ℃, which cannot be adopted for the flexible PSCs. Thus, a low-temperature processed Zn-substituted CsPbIBr2 (CsPb1-xZnxIBr2) is used. In this study, two structures (FTO/SnO2/CsPb1-xZnxIBr2/MoO3/Au (cell #1) and FTO/ZnO/CsPb1-xZnxIBr2/NiO/Au(cell #2)) of the PSC are used to investigate the potential of CsPb1-xZnxIBr2 absorber via numerical simulation. The results revealed that for the well-passivated CsPbIBr2 absorber layer, cell #2 offers a better open circuit voltage than cell #1. At a low defect level, the efficiency of cell #2 is higher than the efficiency of cell #1. But at a high defect level, both cells offer similar power conversion efficiency (η). PV cell parameter analysis revealed that cell #1 delivers a greater photogenerated current than that of cell #2. The shunt resistance obtained for cell #1 and cell #2 is 4.25 ×105 and 1.48 ×107 Ωcm2, respectively. Rs values obtained for cell #1 and cell #2 are 16.40 and 11.66 Ωcm2, respectively. The recombination in cell #1 is much lower than that in cell #2. The results revealed that a maximum η of 16.07 and 17.11% can be achieved for cell #1 and cell #2, respectively.