外延
范德瓦尔斯力
材料科学
基质(水族馆)
薄膜
钙钛矿(结构)
化学物理
凝聚态物理
光电子学
纳米技术
结晶学
图层(电子)
化学
物理
分子
有机化学
海洋学
地质学
作者
Renhong Liang,Liwen Zhu,Hua Liu,Mao Ye,Longlong Shu,Ren‐Kui Zheng,Shanming Ke
标识
DOI:10.1021/acsami.3c05402
摘要
The advantages of van der Waals epitaxy have attracted great interest because they can meet the requirements that conventional epitaxy struggles to satisfy. The weak adatom-substrate interaction without directional covalent bonding drastically relaxes the lattice matching limitation. However, the weak adatom-substrate interaction also leads to ineffectiveness in directing the crystal growth structure, limiting it to one orientation in epitaxial growth. In this work, we propose a domain matching strategy to guide the perovskite-type crystal epitaxial growth on 2D substrates, and we have demonstrated selective deposition of highly (001)-, (110)-, and (111)-oriented epitaxial Fe4N thin films on mica substrates using applicable transition structure design. Our work makes it possible to achieve and control different orientations of van der Waals epitaxy on the same substrate.
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