Self-powered flexible UV photodetectors based on MOCVD-grown Ga2O3 films on mica

In this paper, heteroepitaxy of Ga2O3 film was performed by MOCVD on (001)-oriented mica substrates, and pure (2‾ 01)-oriented beta-Ga2O3 films were obtained. Based on the prepared Ga2O3 film, horizontal structured Schottky barrier photodetectors were fabricated. The device exhibited self-powered capability, achieving a responsivity of 21 mA/W, a photo-to-dark current ratio of 103 and a detectivity of 1.2 × 1012 Jones at 0 V. A high response speed with a relaxation time superior to 0.1s was obtained. In addition, the device showed good flexibility and maintained the pre-bending performance in the bending state. This shows the promise of mica substrates and MOCVD in high-temperature flexible electronics.