发光二极管
量子点
亮度
光电子学
材料科学
二极管
量子产额
淡出
红色
光学
物理
荧光
声学
作者
Бо Лю,Lei Wang,Yan Gao,Yicheng Zeng,Fangze Liu,Huaibin Shen,Liberato Manna,Hongbo Li
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-07-05
卷期号:23 (14): 6689-6697
被引量:13
标识
DOI:10.1021/acs.nanolett.3c01919
摘要
Quantum dot (QD) based light-emitting diodes (QLEDs) hold great promise for next-generation lighting and displays. In order to reach a wide color gamut, deep red QLEDs emitting at wavelengths beyond 630 nm are highly desirable but have rarely been reported. Here, we synthesized deep red emitting ZnCdSe/ZnSeS QDs (diameter ∼16 nm) with a continuous gradient bialloyed core-shell structure. These QDs exhibit high quantum yield, excellent stability, and a reduced hole injection barrier. The QLEDs based on ZnCdSe/ZnSeS QDs have an external quantum efficiency above 20% in the luminance range of 200-90000 cd m-2 and a record T95 operation lifetime (time for the luminance to decrease to 95% of its initial value) of more than 20000 h at a luminance of 1000 cd m-2. Furthermore, the ZnCdSe/ZnSeS QLEDs have outstanding shelf stability (>100 days) and cycle stability (>10 cycles). The reported QLEDs with excellent stability and durability can accelerate the pace of QLED applications.
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