Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting β-InSe/graphene heterostructure

Abstract A 2D ferroelectric β -InSe/graphene heterostructure was fabricated by mechanical exfoliation, and the carrier dynamics crossing the heterostructure interface has been systematically investigated by Raman, photoluminescence, and transient absorption measurements. Due to the efficient interfacial photo excited electron transfer and photogating effect from trapped holes, the heterostructure devices demonstrate superior performance with a maximum responsivity of 2.12 × 10 4 A W −1 , detectivity of 1.73 × 10 14 Jones, and fast response time (241 μ s) under λ = 532 nm laser illumination. Furthermore, the photo responses influenced by the ferroelectric polarization field are investigated. Our work confirms a ferroelectric β -InSe/graphene heterostructure as an outstanding material platform for sensitive optoelectronic applications.