Effects of B2o3-V2o5 on Sinterability and Microwave Dielectric Properties of (Mg1-Xcux)2sio4 Ceramics

The crystal structure, microstructure, and microwave dielectric properties of B2O3-V2O5 co-doped (Mg1-xCux)2SiO4 (x=0.05-0.20) ceramics were investigated. The sintering temperature was successfully reduced to about 1250 ℃/4h for the B2O3-V2O5 co-doped (Mg1-xCux)2SiO4 specimens. The (Mg0.95Cu0.05)2SiO4 with 6%B2O3-6%V2O5 ceramics sintered at 1250 ℃ for 4 h achieved excellent microwave dielectric properties ofεr =6.55, Q·ƒ=37500 GHz and a τƒ of -35.65 ppm/℃.