纳米压痕
压电
应变计
材料科学
传感器
惠斯通大桥
扫描电子显微镜
半导体
矩形
光学
放大器
纳米发生器
压电系数
光电子学
声学
电压
复合材料
电气工程
CMOS芯片
物理
工程类
几何学
数学
电阻器
摘要
This paper presents a novel piezoelectric-driven nanoindentation system for a scanning electron microscope (SEM) with an improved analog compensation (IAC) method. This system mainly consists of a piezoelectric-driven indenter head, a rectangle-shaped transducer, and a nanopositioner module. Compared with the state-of-the-art piezoelectric-driven nanoindentation system with a circle-shaped transducer, the proposed nanoindentation system is capable of multi-direction operation inside a SEM with a rectangle-shaped transducer. Self-matched semiconductor strain gauges are selected as the position sensor for the piezoelectric-actuator. The Wheatstone bridge output voltage cannot achieve a zero temperature coefficient because the temperature coefficients of self-matched semiconductor strain gauge pairs become significantly different from each other after installation in practice. An IAC method is proposed to compensate the temperature coefficients further. Compared with the existing analog compensation method, the IAC method solves the problem of amplifier saturation and improves the sensitivity of the self-matched semiconductor strain gauge pairs position sensor by 27%. The multi-direction operation results inside a standard SEM HITACHI SU5000 validate the advantage of the developed nanoindentation system.
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