光电二极管
材料科学
响应度
线性
光电子学
光电探测器
异质结
双极扩散
比探测率
范德瓦尔斯力
半导体
物理
电子
分子
量子力学
作者
Jinpeng Xu,Xiaoguang Luo,Xi Lin,Xi Zhang,Fan Liu,Yuting Yan,Siqi Hu,Mingwen Zhang,Nannan Han,Xuetao Gan,Yingchun Cheng,Wei Huang
标识
DOI:10.1002/adfm.202310811
摘要
Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trapping within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 {\mu}s. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.
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