Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide

抛光 化学机械平面化 材料科学 表面粗糙度 碳化硅 机械加工 Crystal(编程语言) 表面光洁度 碳化物 复合材料 冶金 计算机科学 程序设计语言
作者
Xinxing Ban,Zhuangzhi Tian,Jianhui Zhu,Tianxu Duan,Shaodong Zheng,Ningchang Wang,Shaoxing Han,Hui Qiu,Zhengxin Li
出处
期刊:Precision Engineering-journal of The International Societies for Precision Engineering and Nanotechnology [Elsevier BV]
卷期号:86: 160-169 被引量:11
标识
DOI:10.1016/j.precisioneng.2023.12.002
摘要

In this study, a novel polishing approach was proposed, that combined nanodiamond mechanical polishing (MP) with silicon dioxide chemical-mechanical polishing (CMP) to achieve the high-quality and high-efficiency processing of single-crystal silicon carbide (SiC). A compound-polishing experiment was conducted to evaluate the material-removal rate (MRR) and surface roughness. The results showed that MP had a high MRR and poor surface quality, whereas CMP obtained a better surface quality; however, its MRR was low. Using surface roughness as the research target, the relationship between MP and CMP was then obtained through a combined process optimisation analysis. Consequently, the compound-polishing method was revealed in terms of the material-removal mechanism, with the surface quality being related to the formation rate of the oxidation reaction layer. Finally, the effectiveness of the compound-polishing method was experimentally verified. For the same surface accuracy, the polishing efficiency of this method improved by 30 % compared to that of CMP. The results proved the proposed compound-polishing approach to be beneficial for enhancing the machining accuracy and efficiency of a single-crystal SiC substrate.
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