材料科学
电致发光
发光二极管
光电子学
荧光
烷基
光致发光
激发
二极管
发光
半最大全宽
量子产额
量子点
纳米技术
图层(电子)
光学
有机化学
电气工程
物理
工程类
化学
作者
Jian Shen,Tianyang Zhang,Wan‐Shan Shen,Zenan Li,Weijie Yuan,Zhenhui Kang,Yang Liu,Liang‐Sheng Liao,Zhenhui Kang
标识
DOI:10.1002/adom.202302178
摘要
Abstract The energy barrier between the highest occupied molecular orbital (HOMO) of the emission layer (EML) and the hole transport layer material (HTL) restricts the development of carbon dots (CDs) based light‐emitting diodes (LEDs). Here, the fabrication of red fluorescent CDs (RCDs) by a one‐step solvothermal method is reported. These RCDs have a photoluminescence quantum yield (PLQY) of 47.97% and a full width at half maximum (FWHM) of 26 nm. This study also shows the RCDs‐based LEDs fabrication with Poly(9,9‐dioctylfluorene‐co‐N‐(4‐butylphenyl) diphenylamine (TFB) as HTL. In normal case, these devices are not able to work due to the large interfacial energy barrier between RCDs and TFB. While, the RCDs‐LEDs can overcome through interfacial energy barriers and achieve stable carrier injecting by a simple in situ electric excitation at the current of 50 mA cm −2 . This work provides a new strategy to overcome the obstacle of mismatch of interfacial energy levels in the LEDs by an in situ electric excitation.
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