A low power memristor based on Lu doped HfO2 ferroelectric thin films and its multifunctional realization

Next-generation non-volatile memories with low power consumption and multiple functions are highly desired in the era of big data. Here, we report a high-performance ferroelectric memristor Pd/Lu:HfO2/La0.7Sr0.3MnO3/SrTiO3/Si, which has low average set and reset powers of 4.28 nW and 0.75 nW, respectively. It can successfully simulate biological synaptic functions, such as the refractory period, spike-timing-dependent plasticity, and paired pulse facilitation. Moreover, the device realizes the simulation of decimal addition and multiplication. In particular, the device can be combined with the threshold device to form a neuromorphic network, which not only realizes multi-value data storage, data decryption and encryption, but also intensity modulation of peak frequency. These results may throw light on the way for the future research of low-power multifunctional neuro morphology chips.