材料科学
发光二极管
光电子学
光学
荧光粉
电致发光
显色指数
色温
折射率
纳米技术
图层(电子)
物理
作者
Yiwei Duo,Yu Yin,Rui He,Renfeng Chen,Yoon‐Kyu Song,Hao Long,Junxi Wang,Tongbo Wei
出处
期刊:Optics Letters
[The Optical Society]
日期:2024-01-01
卷期号:49 (2): 254-254
摘要
We demonstrate the InGaN/GaN-based monolithic micro-pyramid white (MPW) vertical LED (VLED) grown on (−201)-oriented β-Ga 2 O 3 substrate by selective area growth. The transmission electron microscopy (TEM) reveals an almost defect-free GaN pyramid structure on (10–11) sidewalls, including stacked dual-wavelength multi-quantum wells (MQWs). From the electroluminescence (EL) spectra of the fabricated MPW VLED, a white light emission with a high color rendering index (CRI) of 97.4 is achieved. Furthermore, the simulation shows that the light extraction efficiency (LEE) of the MPW VLED is at least 4 times higher compared with the conventional planar LED. These results show that the MPW VLED grown on β-Ga 2 O 3 has great potential for highly efficient phosphor-free white light emission.
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