From Top to Down—Recent Advances in Etching of 2D Materials

材料科学 蚀刻(微加工) 反应离子刻蚀 纳米技术 各向同性腐蚀 干法蚀刻 过程(计算) 计算机科学 操作系统 图层(电子)
作者
Minghui Li,Lin Li,Yixuan Fan,Fei Jiao,Dechao Geng,Wenping Hu
出处
期刊:Advanced Materials Interfaces [Wiley]
卷期号:9 (31) 被引量:9
标识
DOI:10.1002/admi.202201334
摘要

Abstract Etching, considered as the reverse process of growth, has drawn intensive interests in the past decades. Rather from offering building blocks for formation of materials, etching is served as removing basic units from the matrix. Generally, etching plays a critical role in three aspects: first, it can serve as direct top‐down method to precisely make designed patterns for electronic devices. Second, it can offer an indirect way to probe the detailed growth mechanism of 2D materials, enhancing understanding of growth process. Finally, it can be an efficient and facile way to visualize grain boundaries. Herein, several commonly used etching techniques for 2D materials are presented of which chemical vapor deposition etching has attracted the most intensive attentions. Thereafter, the typical etching modes of 2D materials are demonstrated, wherein linear etching, anisotropic etching, and fractal etching are comprehensively exhibited, respectively. Furthermore, the etching mechanism of 2D materials is elucidated, thereby offering a guideline for probing their in‐depth etching dynamics and kinetics. Finally, relevant concerns regarding uniformity and reproducibility within etching process are discussed and the expected future is envisaged.
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