超晶格
材料科学
插层(化学)
离子键合
范德瓦尔斯力
异质结
化学物理
离子
凝聚态物理
空位缺陷
化学气相沉积
纳米技术
透射电子显微镜
结晶学
光电子学
无机化学
化学
分子
物理
有机化学
作者
Wanghua Hu,Jinbo Shen,Tao Wang,Zishun Li,Zhuokai Xu,Zhefeng Lou,Haoyu Qi,Junjie Yan,Jialu Wang,Tian Le,Xiaorui Zheng,Yunhao Lu,Xiao Lin
标识
DOI:10.1002/smtd.202400312
摘要
Abstract Gate‐controlled ionic intercalation in the van der Waals gap of 2D layered materials can induce novel phases and unlock new properties. However, this strategy is often unsuitable for densely packed 2D non‐layered materials. The non‐layered rhombohedral Cr 2 S 3 is an intrinsic heterodimensional superlattice with alternating layers of 2D CrS 2 and 0D Cr 1/3 . Here an innovative chemical vapor deposition method is reported, utilizing strategically modified metal precursors to initiate entirely new seed layers, yields ultrathin inclined‐standing grown 2D Cr 2 S 3 nanosheets with edge instead of face contact with substrate surfaces, enabling rapid all‐dry transfer to other substrates while ensuring high crystal quality. The unconventional ordered vacancy channels within the 0D Cr 1/3 layers, as revealed by cross‐sectional scanning transmission electron microscope, permitting the insertion of Li + ions. An unprecedented metal‐insulator transition, with a resistance modulation of up to six orders of magnitude at 300 K, is observed in Cr 2 S 3 ‐based ionic field‐effect transistors. Theoretical calculations corroborate the metallization induced by Li‐ion intercalation. This work sheds light on the understanding of growth mechanism, structure‐property correlation and highlights the diverse potential applications of 2D non‐layered Cr 2 S 3 superlattice.
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