Stress analysis by finite element method stress for (ZrO2/SiO2)2 anti-reflector multi-layer deposited with ion-assisted electron-gun evaporation

The research proposal was used the electron-gun evaporation with ion-assisted deposition method to deposit zirconium dioxide (ZrO₂) thin films on PET and PC flexible substrates. Then, the finite element method (FEM) with equivalent room temperature (ERT) could simulated the intrinsic stress of these AR multi-layer films. The self-made phase-shifting Moiré interferometer can verify the residual stress of these AR multilayer films. However, a polynomial fixing curvature was used to reduce the simulation error of intrinsic stress low to 1%. The residual stress of AR multilayer films deposited with electron-gun evaporation can be reduced to -279.3MPa.