材料科学
带隙
相(物质)
钙钛矿(结构)
硒化铜铟镓太阳电池
化学
光电子学
结晶学
太阳能电池
有机化学
作者
Ryan J. Stoddard,Adharsh Rajagopal,Ray L. Palmer,Ian L. Braly,Alex K.‐Y. Jen,Hugh W. Hillhouse
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2018-05-02
卷期号:3 (6): 1261-1268
被引量:112
标识
DOI:10.1021/acsenergylett.8b00576
摘要
The open-circuit voltages (VOC) of hybrid perovskite (HP) solar cells do not increase sufficiently with increasing bandgap (for Eg > 1.70eV). We study the impact of A+ size mismatch induced lattice distortions (in ABX3 structure) on the optoelectronic quality of high-bandgap HPs and find that the highest quality films have high A-site size-mismatch, where large guanidinium (GA) compensates for small Cs to keep the tolerance factor in the range for the perovskite structure. Specifically, we find that 1.84eV bandgap (FA0.33GA0.19Cs0.47)Pb(I0.66Br0.34)3 and 1.75eV bandgap (FA0.58GA0.10Cs0.32)Pb(I0.73Br0.27)3 attain quasi-Fermi level splitting of 1.43eV and 1.35eV, respectively, which is >91% of the Shockley-Queisser limit for both cases. Films of 1.75eV bandgap (FA,GA,Cs)Pb(I,Br)3 are then used to fabricate p-i-n photovoltaic devices that have a VOC of 1.24 V. This VOC is among the highest VOC reported for any HPs with similar bandgap (1.7 to 1.8 eV) and a substantial improvement for the p-i-n architecture, which is desirable for tandems with Si, CIGS, or a low-bandgap HP. Collectively, our results show that non-radiative recombination rates are reduced in (FA,GA,Cs)Pb(I,Br)3 films and prove that FA-GA-Cs alloying is a viable route to attain high VOC in high-bandgap HP solar cells.
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