材料科学
MXenes公司
氧化物
半导体
光电子学
数码产品
电接点
薄膜
晶体管
石墨烯
纳米技术
碳化物
复合材料
电气工程
冶金
工程类
电压
作者
Zhenwei Wang,Hyunho Kim,Husam N. Alshareef
标识
DOI:10.1002/adma.201870103
摘要
Two-dimensional metal carbides (MXenes) are successfully integrated into oxide semiconductor electrical switching devices for the first time by Husam N. Alshareef and co-workers in article number 1706656. Both p- and n-type oxide thin-film transistors are fabricated entirely using MXene electrical contacts. The inside front cover shows complementary metal oxide semiconductor inverters using two different semiconductor oxides.
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