Backward Diode Rectifying Behavior in AgCrO2/In2O3
二极管
计算机科学
物理
光电子学
作者
Chenhui Li,Bingbing Yang,Renhuai Wei,Ling Hu,Xianwu Tang,Jie Yang,Xuebin Zhu,Yan Sun
出处
期刊:IEEE Electron Device Letters [Institute of Electrical and Electronics Engineers] 日期:2020-04-01卷期号:41 (4): 541-544被引量:1
标识
DOI:10.1109/led.2020.2975005
摘要
A backward diode consisting of all nondegenerate and transparent semiconducting oxides (TSOs) offers promising opportunities for designing multifunctional electronic devices. In this letter, we report the backward diode rectifying behavior in the nondegenerate AgCrO 2 /In 2 O 3 p-n heterojunction. Both AgCrO 2 and In 2 O 3 films are transparent. The decrease of grain boundary in the In 2 O 3 film can improve the backward diode rectifying performance. The optimized AgCrO 2 /In 2 O 3 heterojunction exhibits a very high reverse rectification ratio that exceeds 10 3 along with a small tunneling current onset voltage. The backward diode rectifying behavior originates from the electron band-to-band tunneling (BTBT) current in the reverse voltage region, which is induced by type-III band alignment. This study will pave the way for achieving transparent backward diodes by using all nondegenerate TSOs p-n heterojunctions.