材料科学
阈值电压
非晶硅
薄膜晶体管
频道(广播)
指数函数
晶体管
无定形固体
硅
电压
凝聚态物理
光电子学
晶体硅
物理
电气工程
纳米技术
数学分析
量子力学
结晶学
数学
化学
工程类
图层(电子)
出处
期刊:Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期:2012-01-01
卷期号:61 (8): 087303-087303
被引量:4
标识
DOI:10.7498/aps.61.087303
摘要
Based on the double exponential distributions of trap states in the channel of the hydrogenated amorphous silicon thin film transistor, characteristic temperatures of tail state and deep state are distinguished. Besides, series resistances are used to be associated with characteristic lengths of the source and the drain with trap states. By taking advantage of the Poisson equation and Gauss theorem, the expression of the threshold voltage distribution is obtained. The results show that with the increase of the distance between the point and the source, the threshold voltage decreases. Moreover, under the degradation of the self-heating effect, the distribution of the temperature in the channel is non-uniform and its variation in the channel center is the biggest.
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