响应度
光电流
材料科学
金属有机气相外延
光探测
光电探测器
化学气相沉积
光电子学
光刻
兴奋剂
紫外线
光学
外延
纳米技术
物理
图层(电子)
作者
Yusong Zhi,Wanshun Jiang,Zeng Liu,Yuan-Yuan Liu,Xuan Chu,Jia-Hang Liu,Shan Li,Zuyong Yan,Yuehui Wang,Peigang Li,Zhenping Wu,Weihua Tang
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2021-05-01
卷期号:30 (5): 057301-057301
被引量:11
标识
DOI:10.1088/1674-1056/abe37a
摘要
Si-doped β -Ga 2 O 3 films are fabricated through metal-organic chemical vapor deposition (MOCVD). Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 mA under 200 μW⋅cm −2 254 nm illumination and ± 20 V bias, leading to photo-responsivity as high as 788 A⋅W −1 . The Si-doped β -Ga 2 O 3 -based PD is promised to perform solar-blind photodetection with high performance.
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