二硫化钼
材料科学
单层
锡
钼
二硫键
纳米技术
化学工程
冶金
生物化学
工程类
化学
作者
Haoxin Mo,Xiu‐Mei Zhang,Yuan Liu,Peipei Kang,Haiyan Nan,Xiaofeng Gu,Kostya Ostrikov,Shaoqing Xiao
标识
DOI:10.1021/acsami.9b13645
摘要
Elemental alloying in monolayer, two-dimensional (2D) transition metal dichalcogenides (TMDs) promises unprecedented ability to modulate their electronic structure leading to unique optoelectronic properties. MoS2 monolayer based photodetectors typically exhibit a high photoresponsivity but suffer from a low response time. Here we develop a new approach for Sn alloying in MoS2 monolayers based on the synergy of the customized chemical vapor deposition (CVD) and the effects of common salt (NaCl) to produce high-quality and large-size Mo1-xSnxS2 (x < 0.5) alloy monolayers. The composition difference results in different growth behaviors; Mo dominated alloys (x < 0.5) exhibit uniform and large size (up to 100 μm) triangular monolayers, while Sn-dominated alloys (x > 0.5) present multilayer grains. The Mo1-xSnxS2 (x < 0.5) based photodetectors and phototransistors exhibit a maximum responsitivity of 12 mA/W and a minimum response time of 20 ms, which is faster than most reported MoS2-based photodetectors. This work offers new perspectives for precision 2D alloy engineering to improve the optoelectronic performance of TMD-based photodetectors.
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