Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

Abstract A marked improvement in the reliability of a high-mobility In–Ga–Zn–O (IGZO) thin-film transistor (TFT) is presented after 150 °C annealing by applying hydrogenated IGZO (IGZO:H) as a channel. To enhance field-effect mobility ( μ FE ), the atomic ratio of In:Ga:Zn was chosen to be 6:2:1. The IGZO:H TFT exhibited a μ FE of 18.9 cm 2 V −1 s −1 without hysteresis. Moreover, the reliability of the IGZO:H TFT significantly improved after 150 °C annealing as compared with that of a conventional IGZO TFT. Thus, the use of IGZO:H is an effective method of improving both the electrical properties and reliability of TFTs for flexible electronics.