Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell

Abstract This work presents results of a laboratory‐scale interdigitated back contact (IBC) solar cell with an independently measured efficiency of 25.0%, featuring open‐circuit voltage of 716 mV, short‐circuit current of 43.0 mA.cm −2 and fill factor of 81.0%. Notably, the high efficiency was achieved based on significant improvements resulting from the optimised cell structure, excellent SiO 2 ‐SiN x ‐SiO x (ONO) surface passivation, detailed bulk lifetime management strategy and improved random pyramid texturing. Experimental details and analysis of the individual improvements over prior work are presented in‐depth.