寄生元件
电感
寄生电容
电容
材料科学
碳化硅
热阻
寄生提取
光电子学
炸薯条
电磁屏蔽
电源模块
电子工程
电气工程
功率(物理)
热的
复合材料
工程类
物理
电压
量子力学
气象学
电极
作者
Yue Xie,Yifan Zhang,Chao Cai,Yong Kang
标识
DOI:10.1109/wipdaasia51810.2021.9656014
摘要
Parasitic parameters of packaging structure can affect the performance of silicon carbide (SiC) devices. Previous researches on SiC power modules lack a comprehensive comparison of different kinds of packaging structures. In this paper, six kinds of power modules are designed under the same standard, and their parasitic inductance, parasitic capacitance, and thermal resistance are extracted by finite element simulation for comparison. According to the result, the double-side-cooling structure has the smallest thermal resistance. The chip-on-chip structure shows extremely small parasitic inductance and capacitance, but this structure is complex. The full-shielding structure has extremely small parasitic capacitance and medial parasitic inductance, while its thermal resistance is larger than other structures. The rest three structures show mediocre performance.
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