聚酰亚胺
材料科学
电容器
物理
纳米技术
图层(电子)
量子力学
电压
作者
Yuting Chen,Yang Yang,Yukui Zhang,Pengfei Jiang,Youqian Xu,Yan Wang,Yaxin Ding,Zhiwei Dang,Tiancheng Gong,Yan Wang,Qing Luo
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2022-06-01
卷期号:43 (6): 930-933
被引量:8
标识
DOI:10.1109/led.2022.3171273
摘要
Flexible energy-storage capacitor has attrac- ted great interest on account of the rapid development of the combination of intelligent systems and flexible electronics. In this work, we fabricated flexible energy-storage capacitors by depositing Hf x Zr 1-x O 2 thin films on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible capacitors exhibit high energy storage density (ESD $\approx 35.4$ J/cm 3 ) and efficiency ( $\eta \approx 69.3$ %). Furthermore, ESD and $\eta $ remained stable even bending 5000 cycles with a radius of 2 mm. This work provide reference for the development of high-performance flexible HfO 2 -based energy storage devices.
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