材料科学
离子注入
氧化物
二次离子质谱法
磷
分析化学(期刊)
离子
热氧化
图层(电子)
冶金
纳米技术
化学
色谱法
有机化学
作者
Tomasz Sledziewski,Aleksey Mikhaylov,Sergey A. Reshanov,Adolf Schöner,Heiko B. Weber,Michael Krieger
出处
期刊:Materials Science Forum
日期:2014-02-01
卷期号:778-780: 575-578
被引量:6
标识
DOI:10.4028/www.scientific.net/msf.778-780.575
摘要
The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO 2 interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C - V measurements. Conductance method measurements revealed a significant reduction of density of interface traps D it with energy E C - E it > 0.3 V for P + -implanted samples with [P] interface = 1.5 10 18 cm -3 in the SiC layer at the interface.
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