Auger recombination in AlGaN quantum wells for UV light-emitting diodes

We show that the often observed efficiency droop in AlGaN quantum well heterostructures is an internal carrier loss process, analogous to the InGaN system. We attribute this loss process to Auger recombination, with C = 2.3 × 10−30 cm6 s−1; a similar value found commonly in InGaN-based devices. As a result, the peak internal quantum efficiency (IQE) of our structures is limited to 66%. These values were obtained by resonant excitation (time-resolved) photoluminescence (PL), avoiding common error sources in IQE measurements. The existence of strong Auger recombination implies that simple methods employed for IQE determination, such as temperature-dependent PL, may lead to erroneous values. Auger losses will have to be considered once the challenges regarding carrier injection are solved.