钻石
硅
电离辐射
辐射硬化
辐射
原子物理学
横截面(物理)
中子
质子
物理
辐射损伤
核物理学
多晶硅
辐照
材料科学
光电子学
电极
复合材料
薄膜晶体管
量子力学
作者
W. De Boer,J. Bol,A. Furgeri,Steffen Müller,C. Sander,E. Berdermann,M. Pomorski,M. Huhtinen
标识
DOI:10.1002/pssa.200776327
摘要
Abstract The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si‐ and C‐sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non‐Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non‐relativistic energies the elastic cross section prevails. The smaller inelastic nucleon‐carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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