单层
材料科学
空位缺陷
分子
硫黄
结晶学
兴奋剂
化学物理
纳米技术
光电子学
化学
冶金
有机化学
作者
Dongwei Ma,Qinggao Wang,Tingxian Li,Chaozheng He,Benyuan Ma,Yanan Tang,Zhansheng Lu,Zongxian Yang
摘要
The repairing process of the MoS2 monolayer containing single S vacancies has been theoretically investigated by using CO, NO and NO2 molecules. The results show that repairing the S vacancy with CO, NO and NO2 molecules can be used to realize the C, N and O-doped MoS2 monolayers, respectively.
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