材料科学
薄板电阻
退火(玻璃)
硅化物
光电子学
无定形固体
泄漏(经济)
硅
镍
冶金
电气工程
复合材料
工程类
结晶学
化学
宏观经济学
经济
图层(电子)
作者
Shi Cheng Ding,Larry Chen,Cheng-Jui Yang
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2013-03-08
卷期号:52 (1): 671-676
标识
DOI:10.1149/05201.0671ecst
摘要
With the aggressive scale down of MOSFET junction depth, nickel silicide (incorporated with platinum) is finally coming into picture with its low resistivity and silicon consumption. The sheet resistance and junction leakage are always a tradeoff during nickel silicide process development. This article introduces a novel nickel silicide process scheme to achieve low sheet resistance and low junction leakage at the same time. PAI( P re- A morphous I mplant) is applying for sheet resistance reduction; the well controlled low process temperature during PAI and MSA ( M illi- s econd A nnealing) maintain the low junction leakage level.
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