电迁移
倒装芯片
焊接
材料科学
空隙(复合材料)
冶金
复合材料
光电子学
胶粘剂
图层(电子)
作者
Y. H. Chang,S. Liang,Chih Chen
摘要
Kelvin bump probes were fabricated in flip-chip solder joints, and they were employed to monitor the void formation during electromigration. We found that voids started to form at approximately 5% of the failure time under 0.8A at 150°C, and the bump resistance increased only 0.02mΩ in the initial stage of void formation. Three-dimensional simulation was performed to examine the increase in bump resistance at different stages of void formation, and it fitted the experimental results quite well. This technique provides a systematic way for investigating the void formation during electromigration.
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