光电流
纳米-
电极
材料科学
电压
光电子学
分析化学(期刊)
纳米技术
电气工程
复合材料
化学
工程类
色谱法
物理化学
作者
Wenjun Luo,Tao Yu,Yaoming Wang,Zhaosheng Li,Jinhua Ye,Zhigang Zou
标识
DOI:10.1088/0022-3727/40/4/027
摘要
N-type semiconductor thin films of WO3, Fe2O3 and the composite structure of WO3/Fe2O3were prepared on FTO (SnO2 : F on glass) substrates by the sol–gel method. Their structures and optical properties were characterized by XRD, SEM and UV–Vis spectrometry. Their photoelectrochemical properties were also investigated in a three-electrode cell system. The results showed that the photocurrent of the WO3/Fe2O3 film was higher than that of WO3 or Fe2O3 alone, particularly under visible light illumination (λ > 440 nm). In this case there was almost no photocurrent in the WO3 film. A reasonable explanation was that the photo-generated electrons could transfer more easily in WO3/Fe2O3 than in WO3 or Fe2O3 alone due to their special conduction band structures. Therefore, the interface between WO3 and Fe2O3 played an important role in improving the conversion efficiency.
科研通智能强力驱动
Strongly Powered by AbleSci AI